EFC8811R PDF and Equivalents Search

 

EFC8811R Specs and Replacement

Type Designator: EFC8811R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 570 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: CSP6

EFC8811R substitution

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EFC8811R datasheet

 ..1. Size:712K  onsemi
 efc8811r.pdf pdf_icon

EFC8811R

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Detailed specifications: EFC2J013NUZ, EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, EFC3C001NUZ, EFC4C002NL, EFC4K105NUZ, EFC4K110NUZ, MMIS60R580P, FCB070N65S3, FCB099N65S3, FCB125N65S3, FCB260N65S3, FCD360N65S3R0, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085

Keywords - EFC8811R MOSFET specs

 EFC8811R cross reference

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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