All MOSFET. EFC8811R Datasheet

 

EFC8811R Datasheet and Replacement


   Type Designator: EFC8811R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 570 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: CSP6
 

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EFC8811R Datasheet (PDF)

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EFC8811R

EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2m, 27A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 3.2m@ 4.5V Features 3.2m@ 4.0V

Datasheet: EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , 2N7002 , FCB070N65S3 , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 , FCD360N65S3R0 , FCD600N65S3R0 , FCH023N65S3 , FCH041N65F-F085 .

History: SRC65R052FB | IPB34CN10N | FQD2N50TF | HMS11N60K | IRHMS57264SE | P2610BT | DMN3035LWN

Keywords - EFC8811R MOSFET datasheet

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