All MOSFET. EFC8811R Datasheet

 

EFC8811R MOSFET. Datasheet pdf. Equivalent


   Type Designator: EFC8811R
   Marking Code: ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 570 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: CSP6

 EFC8811R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EFC8811R Datasheet (PDF)

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 efc8811r.pdf

EFC8811R EFC8811R

EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2m, 27A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 3.2m@ 4.5V Features 3.2m@ 4.0V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2796S | RQ1E100XN | CS6N60A3HDY

 

 
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