FCB070N65S3 PDF and Equivalents Search

 

FCB070N65S3 Specs and Replacement

Type Designator: FCB070N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO263

FCB070N65S3 substitution

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FCB070N65S3 datasheet

 ..1. Size:321K  onsemi
 fcb070n65s3.pdf pdf_icon

FCB070N65S3

FCB070N65S3 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 44 A, 70 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 70 mW @ 10 V 44 A charge performance. This advan... See More ⇒

Detailed specifications: EFC2K101NUZ, EFC2K103NUZ, EFC2K107NUZ, EFC3C001NUZ, EFC4C002NL, EFC4K105NUZ, EFC4K110NUZ, EFC8811R, AOD4184A, FCB099N65S3, FCB125N65S3, FCB260N65S3, FCD360N65S3R0, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085

Keywords - FCB070N65S3 MOSFET specs

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