All MOSFET. FCB070N65S3 Datasheet

 

FCB070N65S3 Datasheet and Replacement


   Type Designator: FCB070N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO263
 

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FCB070N65S3 Datasheet (PDF)

 ..1. Size:321K  onsemi
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FCB070N65S3

FCB070N65S3MOSFET Power,N-Channel, SUPERFET) III,Easy Drive650 V, 44 A, 70 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 70 mW @ 10 V 44 Acharge performance. This advan

Datasheet: EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , EFC8811R , HY1906P , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 , FCD360N65S3R0 , FCD600N65S3R0 , FCH023N65S3 , FCH041N65F-F085 , FCH072N60F-F085 .

History: P1060ETFNA | WMK90R260S

Keywords - FCB070N65S3 MOSFET datasheet

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