FCB260N65S3 Datasheet and Replacement
Type Designator: FCB260N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO263
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FCB260N65S3 Datasheet (PDF)
fcb260n65s3.pdf

FCB260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advance technology is tailored
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: KI2305DS | DH150N12B | 12N65KG-TF1-T | 2SK1215F | R5016ANJ | BSB280N15NZ3G | ELM13401CA
Keywords - FCB260N65S3 MOSFET datasheet
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History: KI2305DS | DH150N12B | 12N65KG-TF1-T | 2SK1215F | R5016ANJ | BSB280N15NZ3G | ELM13401CA



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