FCB260N65S3 MOSFET Datasheet: N-Ch, 650V, 12A. Full specification with pinout and replacement list

FCB260N65S3 Specs and Replacement

Type Designator: FCB260N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO263

FCB260N65S3 substitution

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FCB260N65S3 datasheet

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FCB260N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advance technology is tailored ... See More ⇒

Detailed specifications: EFC3C001NUZ, EFC4C002NL, EFC4K105NUZ, EFC4K110NUZ, EFC8811R, FCB070N65S3, FCB099N65S3, FCB125N65S3, IRFP064N, FCD360N65S3R0, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085, FCH125N65S3R0