All MOSFET. FCB260N65S3 Datasheet

 

FCB260N65S3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCB260N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO263

 FCB260N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCB260N65S3 Datasheet (PDF)

 ..1. Size:311K  onsemi
 fcb260n65s3.pdf

FCB260N65S3 FCB260N65S3

FCB260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advance technology is tailored

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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