All MOSFET. FCD360N65S3R0 Datasheet

 

FCD360N65S3R0 Datasheet and Replacement


   Type Designator: FCD360N65S3R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO252
 

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FCD360N65S3R0 Datasheet (PDF)

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FCD360N65S3R0

FCD360N65S3R0Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 10 A, 360 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

Datasheet: EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , EFC8811R , FCB070N65S3 , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 , IRFP064N , FCD600N65S3R0 , FCH023N65S3 , FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 , FCH104N60F-F085 , FCH125N65S3R0 , FCHD040N65S3 .

History: PHK12NQ03LT | DMN2056U | CED830G | AOD484 | 2SK2919 | NVD5414N | UPA1917

Keywords - FCD360N65S3R0 MOSFET datasheet

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