FCD360N65S3R0 PDF and Equivalents Search

 

FCD360N65S3R0 Specs and Replacement

Type Designator: FCD360N65S3R0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO252

FCD360N65S3R0 substitution

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FCD360N65S3R0 datasheet

 ..1. Size:410K  onsemi
 fcd360n65s3r0.pdf pdf_icon

FCD360N65S3R0

FCD360N65S3R0 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored... See More ⇒

Detailed specifications: EFC4C002NL, EFC4K105NUZ, EFC4K110NUZ, EFC8811R, FCB070N65S3, FCB099N65S3, FCB125N65S3, FCB260N65S3, AO4468, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085, FCH125N65S3R0, FCHD040N65S3

Keywords - FCD360N65S3R0 MOSFET specs

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