All MOSFET. FCH023N65S3 Datasheet

 

FCH023N65S3 Datasheet and Replacement


   Type Designator: FCH023N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 595 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247
 

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FCH023N65S3 Datasheet (PDF)

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FCH023N65S3

www.onsemi.comFCH023N65S3N-Channel SuperFET III MOSFET650 V, 75 A, 23 mFeatures Description 700 V @ TJ = 150C SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is uti- Typ. RDS(on) = 19.5 mlizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Qg = 222 nC)tance and

Datasheet: EFC4K110NUZ , EFC8811R , FCB070N65S3 , FCB099N65S3 , FCB125N65S3 , FCB260N65S3 , FCD360N65S3R0 , FCD600N65S3R0 , IRFZ44N , FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 , FCH104N60F-F085 , FCH125N65S3R0 , FCHD040N65S3 , FCHD125N65S3R0 , FCHD190N65S3R0 .

History: IRFR3708TR | 2SK2602 | WMM22N50C4 | STD1HN60K3 | 2SK674 | SSF2816E | 2SK682

Keywords - FCH023N65S3 MOSFET datasheet

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