FCH023N65S3 PDF and Equivalents Search

 

FCH023N65S3 Specs and Replacement

Type Designator: FCH023N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 595 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO247

FCH023N65S3 substitution

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FCH023N65S3 datasheet

 ..1. Size:1285K  onsemi
 fch023n65s3.pdf pdf_icon

FCH023N65S3

www.onsemi.com FCH023N65S3 N-Channel SuperFET III MOSFET 650 V, 75 A, 23 m Features Description 700 V @ TJ = 150 C SuperFET III MOSFET is ON Semiconductor s brand- new high voltage super-junction (SJ) MOSFET family that is uti- Typ. RDS(on) = 19.5 m lizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Qg = 222 nC) tance and ... See More ⇒

Detailed specifications: EFC4K110NUZ, EFC8811R, FCB070N65S3, FCB099N65S3, FCB125N65S3, FCB260N65S3, FCD360N65S3R0, FCD600N65S3R0, IRFZ44N, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085, FCH125N65S3R0, FCHD040N65S3, FCHD125N65S3R0, FCHD190N65S3R0

Keywords - FCH023N65S3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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