FCH023N65S3 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCH023N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 595 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 222 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO247
FCH023N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCH023N65S3 Datasheet (PDF)
..1. Size:1285K onsemi
fch023n65s3.pdf
fch023n65s3.pdf
www.onsemi.comFCH023N65S3N-Channel SuperFET III MOSFET650 V, 75 A, 23 mFeatures Description 700 V @ TJ = 150C SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is uti- Typ. RDS(on) = 19.5 mlizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Qg = 222 nC)tance and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
