All MOSFET. FCH023N65S3 Datasheet

 

FCH023N65S3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCH023N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 595 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 222 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247

 FCH023N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCH023N65S3 Datasheet (PDF)

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 fch023n65s3.pdf

FCH023N65S3 FCH023N65S3

www.onsemi.comFCH023N65S3N-Channel SuperFET III MOSFET650 V, 75 A, 23 mFeatures Description 700 V @ TJ = 150C SuperFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is uti- Typ. RDS(on) = 19.5 mlizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Qg = 222 nC)tance and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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