All MOSFET. FCHD040N65S3 Datasheet

 

FCHD040N65S3 Datasheet and Replacement


   Type Designator: FCHD040N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 136 nC
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247AD
 

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FCHD040N65S3 Datasheet (PDF)

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FCHD040N65S3

FCHD040N65S3MOSFET Power, N-Channel,SUPERFET) III, Easy Drive,650 V, 65 A, 40 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailor

Datasheet: FCD360N65S3R0 , FCD600N65S3R0 , FCH023N65S3 , FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 , FCH104N60F-F085 , FCH125N65S3R0 , IRF540N , FCHD125N65S3R0 , FCHD190N65S3R0 , FCMT099N65S3 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , FCP125N65S3R0 , FCP165N65S3 .

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