FCHD040N65S3 PDF and Equivalents Search

 

FCHD040N65S3 Specs and Replacement

Type Designator: FCHD040N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247AD

FCHD040N65S3 substitution

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FCHD040N65S3 datasheet

 ..1. Size:322K  onsemi
 fchd040n65s3.pdf pdf_icon

FCHD040N65S3

FCHD040N65S3 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive, 650 V, 65 A, 40 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailor... See More ⇒

Detailed specifications: FCD360N65S3R0, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085, FCH125N65S3R0, IRF540, FCHD125N65S3R0, FCHD190N65S3R0, FCMT099N65S3, FCMT125N65S3, FCMT180N65S3, FCMT250N65S3, FCP125N65S3R0, FCP165N65S3

Keywords - FCHD040N65S3 MOSFET specs

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