FCHD190N65S3R0 PDF and Equivalents Search

 

FCHD190N65S3R0 Specs and Replacement

Type Designator: FCHD190N65S3R0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO247AD

FCHD190N65S3R0 substitution

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FCHD190N65S3R0 datasheet

 ..1. Size:318K  onsemi
 fchd190n65s3r0.pdf pdf_icon

FCHD190N65S3R0

FCHD190N65S3R0 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive, 650 V, 17 A, 190 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tai... See More ⇒

 9.1. Size:329K  onsemi
 fchd125n65s3r0.pdf pdf_icon

FCHD190N65S3R0

FCHD125N65S3R0 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive, 650 V, 24 A, 125 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tai... See More ⇒

Detailed specifications: FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085, FCH125N65S3R0, FCHD040N65S3, FCHD125N65S3R0, IRFP460, FCMT099N65S3, FCMT125N65S3, FCMT180N65S3, FCMT250N65S3, FCP125N65S3R0, FCP165N65S3, FCP165N65S3R0, FCP190N60_GF102

Keywords - FCHD190N65S3R0 MOSFET specs

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