All MOSFET. FCHD190N65S3R0 Datasheet

 

FCHD190N65S3R0 Datasheet and Replacement


   Type Designator: FCHD190N65S3R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO247AD
 

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FCHD190N65S3R0 Datasheet (PDF)

 ..1. Size:318K  onsemi
 fchd190n65s3r0.pdf pdf_icon

FCHD190N65S3R0

FCHD190N65S3R0MOSFET Power, N-Channel,SUPERFET) III, Easy Drive,650 V, 17 A, 190 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tai

 9.1. Size:329K  onsemi
 fchd125n65s3r0.pdf pdf_icon

FCHD190N65S3R0

FCHD125N65S3R0MOSFET Power, N-Channel,SUPERFET) III, Easy Drive,650 V, 24 A, 125 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tai

Datasheet: FCH023N65S3 , FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 , FCH104N60F-F085 , FCH125N65S3R0 , FCHD040N65S3 , FCHD125N65S3R0 , IRF640 , FCMT099N65S3 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , FCP125N65S3R0 , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 .

History: SE3205A

Keywords - FCHD190N65S3R0 MOSFET datasheet

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