All MOSFET. FCMT099N65S3 Datasheet

 

FCMT099N65S3 Datasheet and Replacement


   Type Designator: FCMT099N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: PQFN4-8X8-2P
 

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FCMT099N65S3 Datasheet (PDF)

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FCMT099N65S3

FCMT099N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 30 A, 99 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored t

Datasheet: FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 , FCH104N60F-F085 , FCH125N65S3R0 , FCHD040N65S3 , FCHD125N65S3R0 , FCHD190N65S3R0 , IRFZ44 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , FCP125N65S3R0 , FCP165N65S3 , FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 .

History: MMF60R360QTH | NCEP10N85AG | IRF5803 | WMP15N65C2 | SI4966DY | HCD65R2K2 | CPC3701C

Keywords - FCMT099N65S3 MOSFET datasheet

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