All MOSFET. FCU600N65S3R0 Datasheet

 

FCU600N65S3R0 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCU600N65S3R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: IPAK

 FCU600N65S3R0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCU600N65S3R0 Datasheet (PDF)

 ..1. Size:288K  onsemi
 fcu600n65s3r0.pdf

FCU600N65S3R0 FCU600N65S3R0

FCU600N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 6 A, 600 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailore

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