All MOSFET. FDB1D7N10CL7 Datasheet

 

FDB1D7N10CL7 Datasheet and Replacement


   Type Designator: FDB1D7N10CL7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 268 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 5025 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm
   Package: D2-PAK-7L
 

 FDB1D7N10CL7 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDB1D7N10CL7 Datasheet (PDF)

 ..1. Size:352K  onsemi
 fdb1d7n10cl7.pdf pdf_icon

FDB1D7N10CL7

FDB1D7N10CL7N-Channel Shielded GatePOWERTRENCH) MOSFET100 V, 268 A, 1.7 mWDescriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that incorporates Shielded Gatetechnology. This process has been optimized to minimize on-stateVDS ID MAX rDS(on) MAXresistance and yet maintain superior switching performance with bestin

Datasheet: FDB0260N1007L , FDB0300N1007L , FDB045AN08A0-F085 , FDB0630N1507L , FDB0690N1507L , FDB070AN06A0-F085 , FDB075N15A-F085 , FDB14AN06LA0-F085 , 5N65 , FDB2532-F085 , FDB2552_F085 , FDB28N30 , FDB3632-F085 , FDB3652-F085 , FDB3672-F085 , FDB86360-F085 , FDB86363-F085 .

Keywords - FDB1D7N10CL7 MOSFET datasheet

 FDB1D7N10CL7 cross reference
 FDB1D7N10CL7 equivalent finder
 FDB1D7N10CL7 lookup
 FDB1D7N10CL7 substitution
 FDB1D7N10CL7 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.