FDB1D7N10CL7 PDF and Equivalents Search

 

FDB1D7N10CL7 Specs and Replacement

Type Designator: FDB1D7N10CL7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 268 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 5025 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm

Package: D2-PAK-7L

FDB1D7N10CL7 substitution

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FDB1D7N10CL7 datasheet

 ..1. Size:352K  onsemi
 fdb1d7n10cl7.pdf pdf_icon

FDB1D7N10CL7

FDB1D7N10CL7 N-Channel Shielded Gate POWERTRENCH) MOSFET 100 V, 268 A, 1.7 mW Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state VDS ID MAX rDS(on) MAX resistance and yet maintain superior switching performance with best in... See More ⇒

Detailed specifications: FDB0260N1007L, FDB0300N1007L, FDB045AN08A0-F085, FDB0630N1507L, FDB0690N1507L, FDB070AN06A0-F085, FDB075N15A-F085, FDB14AN06LA0-F085, 5N65, FDB2532-F085, FDB2552_F085, FDB28N30, FDB3632-F085, FDB3652-F085, FDB3672-F085, FDB86360-F085, FDB86363-F085

Keywords - FDB1D7N10CL7 MOSFET specs

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