All MOSFET. FDB1D7N10CL7 Datasheet

 

FDB1D7N10CL7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDB1D7N10CL7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 268 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 116 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 5025 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm
   Package: D2-PAK-7L

 FDB1D7N10CL7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB1D7N10CL7 Datasheet (PDF)

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 fdb1d7n10cl7.pdf

FDB1D7N10CL7 FDB1D7N10CL7

FDB1D7N10CL7N-Channel Shielded GatePOWERTRENCH) MOSFET100 V, 268 A, 1.7 mWDescriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that incorporates Shielded Gatetechnology. This process has been optimized to minimize on-stateVDS ID MAX rDS(on) MAXresistance and yet maintain superior switching performance with bestin

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: EFC6612R

 

 
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