FDB28N30 MOSFET Datasheet: N-Ch, 300V, 28A. Full specification with pinout and replacement list

FDB28N30 Specs and Replacement

Type Designator: FDB28N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 135 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.129 Ohm

Package: TO263

FDB28N30 substitution

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FDB28N30 datasheet

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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June 2007 UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129 Features Description RDS(on) = 0.108 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 39nC) stripe, DMOS technology. Low Crss ( Typ. 35pF) This advanced technology has been especia... See More ⇒

Detailed specifications: FDB0630N1507L, FDB0690N1507L, FDB070AN06A0-F085, FDB075N15A-F085, FDB14AN06LA0-F085, FDB1D7N10CL7, FDB2532-F085, FDB2552_F085, AON6380, FDB3632-F085, FDB3652-F085, FDB3672-F085, FDB86360-F085, FDB86363-F085, FDB86366-F085, FDB86563-F085, FDB86566-F085