FDB9506L-F085 Datasheet and Replacement
Type Designator: FDB9506L-F085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 126 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 3300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO263
FDB9506L-F085 substitution
FDB9506L-F085 Datasheet (PDF)
fdb9506l-f085.pdf

FDB9506L-F085Power MOSFET-40 V, 3.6 mW, -110 A, Single P-ChannelFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.6
fdb9503l-f085.pdf

FDB9503L-F085P-Channel PowerTrench MOSFETSD- 40 V, - 110 A, 2.6 mGFeatures Typical RDS(on) = 2.0 m at VGS = - 10V, ID = - 80 A Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 AGS UIS CapabilityD RoHS CompliantTO-263AB Qualified to AEC Q101 FDB SERIESApplications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electr
fdb9509l-f085.pdf

FDB9509L-F085Power MOSFET, SingleP-Channel-40 V, -83 A, 8.0 mWFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant8.0 mW @ -10 V-40 V -83 A12.5 mW @ -4.5 VMAXIM
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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