FDB9506L-F085 Datasheet and Replacement
Type Designator: FDB9506L-F085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 126 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 3300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO263
FDB9506L-F085 Datasheet (PDF)
fdb9506l-f085.pdf

FDB9506L-F085Power MOSFET-40 V, 3.6 mW, -110 A, Single P-ChannelFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.6
fdb9503l-f085.pdf

FDB9503L-F085P-Channel PowerTrench MOSFETSD- 40 V, - 110 A, 2.6 mGFeatures Typical RDS(on) = 2.0 m at VGS = - 10V, ID = - 80 A Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 AGS UIS CapabilityD RoHS CompliantTO-263AB Qualified to AEC Q101 FDB SERIESApplications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electr
fdb9509l-f085.pdf

FDB9509L-F085Power MOSFET, SingleP-Channel-40 V, -83 A, 8.0 mWFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant8.0 mW @ -10 V-40 V -83 A12.5 mW @ -4.5 VMAXIM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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