All MOSFET. FDBL0240N100 Datasheet

 

FDBL0240N100 Datasheet and Replacement


   Type Designator: FDBL0240N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 79 nC
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 1235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: MO-299A
 

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FDBL0240N100 Datasheet (PDF)

 ..1. Size:520K  onsemi
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FDBL0240N100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:379K  fairchild semi
fdbl0210n80.pdf pdf_icon

FDBL0240N100

April 2015FDBL0210N80N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automations Battery Operated toolsS Battery ProtectionForcurrentpackaged

 8.2. Size:626K  onsemi
fdbl0260n100.pdf pdf_icon

FDBL0240N100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:561K  onsemi
fdbl0200n100.pdf pdf_icon

FDBL0240N100

MOSFET N-Channel,POWERTRENCH)100 V, 300 A, 2.0 mWFDBL0200N100Featureswww.onsemi.com Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 AVDSS RDS(ON) MAX ID MAX UIS Capability100 V 2.0 mW @ 10 V 300 A This Device is Pb-Free and is RoHS CompliantApplications Industrial Motor Drive Industrial Power Supp

Datasheet: FDB9406-F085 , FDB9406L-F085 , FDB9409-F085 , FDB9409L-F085 , FDB9503L-F085 , FDB9506L-F085 , FDB9509L-F085 , FDBL0200N100 , K2611 , FDBL0260N100 , FDBL86062-F085 , FDBL86063 , FDBL86063-F085 , FDBL86066-F085 , FDBL86210-F085 , FDBL86361-F085 , FDBL86363-F085 .

Keywords - FDBL0240N100 MOSFET datasheet

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