All MOSFET. STP3NA50FI Datasheet

 

STP3NA50FI Datasheet and Replacement


   Type Designator: STP3NA50FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: ISOWATT220
 

 STP3NA50FI substitution

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STP3NA50FI Datasheet (PDF)

 6.1. Size:196K  st
 stp3na50.pdf pdf_icon

STP3NA50FI

STP3NA50STP3NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP3NA50 500 V

 8.1. Size:59K  st
 stp3na90-.pdf pdf_icon

STP3NA50FI

STP3NA90STP3NA90FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(o n) DSTP3NA90 900 V

 8.2. Size:436K  st
 stp3na60.pdf pdf_icon

STP3NA50FI

STP3NA60STP3NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3NA60 600 V

 8.3. Size:383K  st
 stp3na80.pdf pdf_icon

STP3NA50FI

STP3NA80STP3NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3NA80 800 V

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Datasheet: STP3N100FI , STP3N100XI , STP3N50XI , STP3N60FI , STP3N60XI , STP3N80XI , STP3N90 , STP3N90FI , 8N60 , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 , STP40N10FI , STP4N100 , STP4N100FI .

Keywords - STP3NA50FI MOSFET datasheet

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