FDMC010N08C PDF and Equivalents Search

 

FDMC010N08C Specs and Replacement

Type Designator: FDMC010N08C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 381 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: POWER33

FDMC010N08C substitution

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FDMC010N08C datasheet

 ..1. Size:562K  onsemi
 fdmc010n08c.pdf pdf_icon

FDMC010N08C

www.onsemi.com FDMC010N08C N-Channel Shielded Gate PowerTrench MOSFET 80 V, 51 A, 10 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that Max rDS(on) = 10 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 25 m at... See More ⇒

 9.1. Size:411K  fairchild semi
 fdmc0310as.pdf pdf_icon

FDMC010N08C

January 2015 FDMC0310AS N-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 m Features General Description The FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest ... See More ⇒

Detailed specifications: FDD9410L-F085 , FDD9411-F085 , FDD9411L-F085 , FDD9507L-F085 , FDD9509L-F085 , FDD9510L-F085 , FDD9511L-F085 , FDG6332C-F085 , 2SK3878 , FDMC8010DC , FDMD8530 , FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P .

History: FDMC8010DC

Keywords - FDMC010N08C MOSFET specs

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