All MOSFET. FDMC010N08C Datasheet

 

FDMC010N08C Datasheet and Replacement


   Type Designator: FDMC010N08C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 381 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: POWER33
 

 FDMC010N08C substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDMC010N08C Datasheet (PDF)

 ..1. Size:562K  onsemi
 fdmc010n08c.pdf pdf_icon

FDMC010N08C

www.onsemi.comFDMC010N08CN-Channel Shielded Gate PowerTrench MOSFET 80 V, 51 A, 10 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MV MOSFET is produced using ONSemiconductors advanced PowerTrench process that Max rDS(on) = 10 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 25 m at

 9.1. Size:411K  fairchild semi
 fdmc0310as.pdf pdf_icon

FDMC010N08C

January 2015FDMC0310ASN-Channel PowerTrench SyncFETTM30 V, 21 A, 4.4 mFeatures General DescriptionThe FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest

Datasheet: FDD9410L-F085 , FDD9411-F085 , FDD9411L-F085 , FDD9507L-F085 , FDD9509L-F085 , FDD9510L-F085 , FDD9511L-F085 , FDG6332C-F085 , IRFP260 , FDMC8010DC , FDMD8530 , FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P .

Keywords - FDMC010N08C MOSFET datasheet

 FDMC010N08C cross reference
 FDMC010N08C equivalent finder
 FDMC010N08C lookup
 FDMC010N08C substitution
 FDMC010N08C replacement

 

 
Back to Top

 


 
.