All MOSFET. BUK7D25-40E Datasheet

 

BUK7D25-40E Datasheet and Replacement


   Type Designator: BUK7D25-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT1220
 

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BUK7D25-40E Datasheet (PDF)

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BUK7D25-40E

BUK7D25-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical solder i

Datasheet: BUK6D38-30E , BUK6D385-100E , BUK6D43-40P , BUK6D43-60E , BUK6D56-60E , BUK6D72-30E , BUK6D77-60E , BUK6D81-80E , NCEP15T14 , BUK7J1R0-40H , BUK7J1R4-40H , BUK7K134-100E , BUK7K15-80E , BUK7K17-80E , BUK7K23-80E , BUK7K29-100E , BUK7K32-100E .

History: BUK7905-40ATE | BUK7K23-80E | TPB65R940C | TPC65R600C | TPC65R380C | TPCC8076 | TPA65R940C

Keywords - BUK7D25-40E MOSFET datasheet

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