BUK7D25-40E Specs and Replacement

Type Designator: BUK7D25-40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT1220

BUK7D25-40E substitution

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BUK7D25-40E datasheet

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BUK7D25-40E

BUK7D25-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical solder i... See More ⇒

Detailed specifications: BUK6D38-30E, BUK6D385-100E, BUK6D43-40P, BUK6D43-60E, BUK6D56-60E, BUK6D72-30E, BUK6D77-60E, BUK6D81-80E, NCEP15T14, BUK7J1R0-40H, BUK7J1R4-40H, BUK7K134-100E, BUK7K15-80E, BUK7K17-80E, BUK7K23-80E, BUK7K29-100E, BUK7K32-100E

Keywords - BUK7D25-40E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.