All MOSFET. BUK7J1R0-40H Datasheet

 

BUK7J1R0-40H MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK7J1R0-40H
   Marking Code: 71H040E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90.7 nC
   trⓘ - Rise Time: 18.9 nS
   Cossⓘ - Output Capacitance: 1644 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: SOT1023

 BUK7J1R0-40H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7J1R0-40H Datasheet (PDF)

 ..1. Size:273K  nxp
 buk7j1r0-40h.pdf

BUK7J1R0-40H BUK7J1R0-40H

BUK7J1R0-40HN-channel 40 V, 1.0 m standard level MOSFET in LFPAK56E31 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in an enhanced LFPAK56E package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2

 7.1. Size:261K  nxp
 buk7j1r4-40h.pdf

BUK7J1R0-40H BUK7J1R0-40H

BUK7J1R4-40HN-channel 40 V, 1.4 m standard level MOSFET in LFPAK56E5 July 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in an enhanced LFPAK56E package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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