BUK7J1R4-40H Specs and Replacement

Type Designator: BUK7J1R4-40H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 395 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1314 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: SOT1023

BUK7J1R4-40H substitution

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BUK7J1R4-40H datasheet

 ..1. Size:261K  nxp
 buk7j1r4-40h.pdf pdf_icon

BUK7J1R4-40H

BUK7J1R4-40H N-channel 40 V, 1.4 m standard level MOSFET in LFPAK56E 5 July 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2... See More ⇒

 7.1. Size:273K  nxp
 buk7j1r0-40h.pdf pdf_icon

BUK7J1R4-40H

BUK7J1R0-40H N-channel 40 V, 1.0 m standard level MOSFET in LFPAK56E 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2... See More ⇒

Detailed specifications: BUK6D43-40P, BUK6D43-60E, BUK6D56-60E, BUK6D72-30E, BUK6D77-60E, BUK6D81-80E, BUK7D25-40E, BUK7J1R0-40H, STP80NF70, BUK7K134-100E, BUK7K15-80E, BUK7K17-80E, BUK7K23-80E, BUK7K29-100E, BUK7K32-100E, BUK7K45-100E, BUK7K89-100E

Keywords - BUK7J1R4-40H MOSFET specs

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