All MOSFET. STP4N100FI Datasheet

 

STP4N100FI MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP4N100FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: ISOWATT220

 STP4N100FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4N100FI Datasheet (PDF)

 6.1. Size:366K  st
 stp4n100.pdf

STP4N100FI STP4N100FI

STP4N100STP4N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4N100 1000 V

 6.2. Size:291K  st
 stp4n100xi.pdf

STP4N100FI STP4N100FI

 8.1. Size:756K  st
 stfw4n150 stp4n150 stw4n150.pdf

STP4N100FI STP4N100FI

STFW4N150STP4N150, STW4N150N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesType VDSS RDS(on) max ID PwSTFW4N150 1500 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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