All MOSFET. STP4N100FI Datasheet

 

STP4N100FI Datasheet and Replacement


   Type Designator: STP4N100FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: ISOWATT220
 

 STP4N100FI substitution

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STP4N100FI Datasheet (PDF)

 6.1. Size:366K  st
 stp4n100.pdf pdf_icon

STP4N100FI

STP4N100STP4N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4N100 1000 V

 6.2. Size:291K  st
 stp4n100xi.pdf pdf_icon

STP4N100FI

 8.1. Size:756K  st
 stfw4n150 stp4n150 stw4n150.pdf pdf_icon

STP4N100FI

STFW4N150STP4N150, STW4N150N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesType VDSS RDS(on) max ID PwSTFW4N150 1500 V

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Datasheet: STP3NA50FI , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 , STP40N10FI , STP4N100 , AO4468 , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI .

History: BLF246B | IXTE250N10

Keywords - STP4N100FI MOSFET datasheet

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