STP4N100FI Specs and Replacement
Type Designator: STP4N100FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: ISOWATT220
STP4N100FI substitution
STP4N100FI datasheet
stp4n100.pdf
STP4N100 STP4N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N100 1000 V ... See More ⇒
stfw4n150 stp4n150 stw4n150.pdf
STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V ... See More ⇒
Detailed specifications: STP3NA50FI , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 , STP40N10FI , STP4N100 , 60N06 , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI .
Keywords - STP4N100FI MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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