All MOSFET. BUK9D23-40E Datasheet

 

BUK9D23-40E Datasheet and Replacement


   Type Designator: BUK9D23-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT1220
 

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BUK9D23-40E Datasheet (PDF)

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BUK9D23-40E

BUK9D23-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

Datasheet: BUK7S0R9-40H , BUK7S1R0-40H , BUK7Y1R4-40H , BUK7Y1R7-40H , BUK7Y2R0-40H , BUK7Y2R5-40H , BUK7Y3R0-40H , BUK7Y3R5-40H , IRFP064N , BUK9J0R9-40H , BUK9K20-80E , BUK9K22-80E , BUK9K30-80E , BUK9K5R1-30E , BUK9K5R6-30E , BUK9M10-30E , BUK9M11-40E .

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