BUK9D23-40E Specs and Replacement

Type Designator: BUK9D23-40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SOT1220

BUK9D23-40E substitution

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BUK9D23-40E datasheet

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BUK9D23-40E

BUK9D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i... See More ⇒

Detailed specifications: BUK7S0R9-40H, BUK7S1R0-40H, BUK7Y1R4-40H, BUK7Y1R7-40H, BUK7Y2R0-40H, BUK7Y2R5-40H, BUK7Y3R0-40H, BUK7Y3R5-40H, AO4468, BUK9J0R9-40H, BUK9K20-80E, BUK9K22-80E, BUK9K30-80E, BUK9K5R1-30E, BUK9K5R6-30E, BUK9M10-30E, BUK9M11-40E

Keywords - BUK9D23-40E MOSFET specs

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