All MOSFET. BUK9J0R9-40H Datasheet

 

BUK9J0R9-40H MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9J0R9-40H
   Marking Code: 90H940E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 46.2 nS
   Cossⓘ - Output Capacitance: 1549 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00094 Ohm
   Package: SOT1023

 BUK9J0R9-40H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9J0R9-40H Datasheet (PDF)

 ..1. Size:277K  nxp
 buk9j0r9-40h.pdf

BUK9J0R9-40H BUK9J0R9-40H

BUK9J0R9-40HN-channel 40 V, 0.9 m logic level MOSFET in LFPAK56E7 October 2019 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in an enhanced LFPAK56E package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top