BUK9J0R9-40H Datasheet and Replacement

   Type Designator: BUK9J0R9-40H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 46.2 nS
   Cossⓘ - Output Capacitance: 1549 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00094 Ohm
   Package: SOT1023
      - MOSFET Cross-Reference Search