BUK9J0R9-40H Specs and Replacement

Type Designator: BUK9J0R9-40H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46.2 nS

Cossⓘ - Output Capacitance: 1549 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00094 Ohm

Package: SOT1023

BUK9J0R9-40H substitution

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BUK9J0R9-40H datasheet

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 buk9j0r9-40h.pdf pdf_icon

BUK9J0R9-40H

BUK9J0R9-40H N-channel 40 V, 0.9 m logic level MOSFET in LFPAK56E 7 October 2019 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2... See More ⇒

Detailed specifications: BUK7S1R0-40H, BUK7Y1R4-40H, BUK7Y1R7-40H, BUK7Y2R0-40H, BUK7Y2R5-40H, BUK7Y3R0-40H, BUK7Y3R5-40H, BUK9D23-40E, IRF730, BUK9K20-80E, BUK9K22-80E, BUK9K30-80E, BUK9K5R1-30E, BUK9K5R6-30E, BUK9M10-30E, BUK9M11-40E, BUK9M11-40H

Keywords - BUK9J0R9-40H MOSFET specs

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