All MOSFET. BUK9J0R9-40H Datasheet

 

BUK9J0R9-40H Datasheet and Replacement


   Type Designator: BUK9J0R9-40H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46.2 nS
   Cossⓘ - Output Capacitance: 1549 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00094 Ohm
   Package: SOT1023
 

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BUK9J0R9-40H Datasheet (PDF)

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BUK9J0R9-40H

BUK9J0R9-40HN-channel 40 V, 0.9 m logic level MOSFET in LFPAK56E7 October 2019 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in an enhanced LFPAK56E package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2

Datasheet: BUK7S1R0-40H , BUK7Y1R4-40H , BUK7Y1R7-40H , BUK7Y2R0-40H , BUK7Y2R5-40H , BUK7Y3R0-40H , BUK7Y3R5-40H , BUK9D23-40E , IRF730 , BUK9K20-80E , BUK9K22-80E , BUK9K30-80E , BUK9K5R1-30E , BUK9K5R6-30E , BUK9M10-30E , BUK9M11-40E , BUK9M11-40H .

History: SQD50N06-07L | RSQ035N03FRA | IRHM7360SE

Keywords - BUK9J0R9-40H MOSFET datasheet

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