All MOSFET. STP4N90 Datasheet

 

STP4N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO220

 STP4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4N90 Datasheet (PDF)

Datasheet: STP40N10 , STP40N10FI , STP4N100 , STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , IRF3205 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 .

 

 
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