STP4N90
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STP4N90
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 100
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 3.6
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 150
ns
Cossⓘ - Выходная емкость: 150
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7
Ohm
Тип корпуса:
TO220
Аналог (замена) для STP4N90
-
подбор ⓘ MOSFET транзистора по параметрам
STP4N90
Datasheet (PDF)
0.1. Size:725K st
stp4n90k5.pdf 
STP4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTP4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 32 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected Appl
9.1. Size:664K st
stp4nk50z.pdf 
STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V
9.2. Size:338K st
stp4nc60a.pdf 
STP4NC60A - STP4NC60AFPSTB4NC60A-1N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC60A 600V
9.3. Size:1055K st
stf4n62k3 stfi4n62k3 sti4n62k3 stp4n62k3 stu4n62k3.pdf 
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on) max ID PTOT3STF4N62K3 25 W 32211STFI4N62K3 25 WTO-220FPIPAKSTI4N62K3 620 V
9.4. Size:82K st
stp4nb80-.pdf 
STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage
9.5. Size:258K st
stp4n20.pdf 
STP4N20N - CHANNEL 200V - 1.3 - 4A TO-220POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4N20 200 V
9.6. Size:399K st
stp4nm60.pdf 
STP4NM60STD3NM60 - STD3NM60-1N-CHANNEL 600V - 1.3 - 3A TO-220/DPAK/IPAKZener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NM60 600 V
9.7. Size:383K st
stp4na80.pdf 
STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V
9.9. Size:577K st
stb4nk60zx std4nk60zx stp4nk60z stp4nk60zfp.pdf 
STB4NK60Z, STB4NK60Z-1, STD4NK60ZSTD4NK60Z-1, STP4NK60Z,STP4NK60ZFPN-channel 600 V - 1.76 - 4 A SuperMESH Power MOSFETDPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FPFeaturesRDS(on) Type VDSS PW ID 332max3 1121STB4NK60Z 600 V
9.10. Size:756K st
stfw4n150 stp4n150 stw4n150.pdf 
STFW4N150STP4N150, STW4N150N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesType VDSS RDS(on) max ID PwSTFW4N150 1500 V
9.11. Size:585K st
std4n52k3 stp4n52k3 stu4n52k3.pdf 
STD4N52K3, STP4N52K3, STU4N52K3DatasheetN-channel 525 V, 2.1 typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packagesFeaturesTAB TAB3VDS RDS(on)max. IDOrder code Package1DPAKSTD4N52K3 2.5 A DPAK32TO-220TAB 1STP4N52K3 525 V 2.6 2.5 A TO-220STU4N52K3 2.5 A IPAK32IPAK 1 100% avalanche tested Extremely high dv/dt capabilityD(
9.12. Size:96K st
stp4na60fp.pdf 
STP4NA60FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP4NA60FP 600 V
9.13. Size:917K st
stf4n62k3 sti4n62k3 stp4n62k3 stu4n62k3.pdf 
STF4N62K3, STI4N62K3STP4N62K3, STU4N62K3N-channel 620 V, 1.7 , 3.8 A SuperMESH3 Power MOSFETTO-220FP, IPAK, TO-220, IPAKFeaturesOrder codes VDSS RDS(on) max ID Pw32STF4N62K3 25 W132STI4N62K3 70 W 1620 V
9.14. Size:53K st
stp4nb100-.pdf 
STP4NB100STP4NB100FP N - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB100 1000 V
9.16. Size:391K st
stp4na80-fi.pdf 
STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V
9.17. Size:932K st
std4n52k3 stf4n52k3 stp4n52k3 stu4n52k3.pdf 
STD4N52K3, STF4N52K3STP4N52K3, STU4N52K3N-channel 525 V, 2.5 A, 2.1 , IPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax 33211STD4N52K3 2.5 A 45 WDPAKIPAKSTF4N52K3 2.5 A 20 W525 V
9.18. Size:759K st
stp4nk60z.pdf 
STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-1N-CHANNEL600V-1.76-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK60Z 600 V
9.19. Size:705K st
std3nm60 std3nm60-1 stp4nm60.pdf 
STP4NM60STD3NM60, STD3NM60-1N-channel 600 V, 1.3 , 3 A TO-220, DPAK, IPAKZener-protected MDmesh Power MOSFETFeaturesVDSS RDS(on)Type ID PW(@Tjmax) max31STD3NM60323 A 42 WDPAK1STD3NM60-1 650
9.20. Size:324K st
stp4nc50-fp.pdf 
STP4NC50STP4NC50FPN-CHANNEL 500V - 2.2 - 3.5A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC50 500 V
9.21. Size:366K st
stp4n100.pdf 
STP4N100STP4N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4N100 1000 V
9.22. Size:526K st
stp4nc80z.pdf 
STP4NC80Z - STP4NC80ZFPSTB4NC80Z - STB4NC80Z-1N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP4NC80Z/FP 800V
9.23. Size:666K st
stp4nk50z stp4nk50zfp std4nk50z std4nk50z-1.pdf 
STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V
9.24. Size:246K st
stp4nb80.pdf 
STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage MESH OVERLAYp
9.26. Size:176K st
stp4nb50 stp4nb50fp.pdf 
STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V
9.27. Size:550K st
stp4nk80z stp4nk80zfp std4nk80z std4nk80z-1.pdf 
STP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAKZener - Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)32STP4NK80Z 800 V
9.29. Size:1294K st
std4n80k5 stf4n80k5 stp4n80k5 stu4n80k5.pdf 
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder code VDS RDS(on) max. ID PTOT31STD4N80K5 60 W3DPAK2STF4N80K5 20 W1800 V 2.5 3 ATO-220FPTAB STP4N80K560 WTAB STU4N80K5 Industrys lowest RDS(on) x area3
9.30. Size:903K st
std4nk50zd std4nk50zd-1 stf4nk50zd stp4nk50zd.pdf 
STD4NK50ZD - STD4NK50ZD-1STF4NK50ZD - STP4NK50ZDN-channel 500V - 2.4 - 3A - TO-220 - TO-220FP- DPAK - IPAKFast diode SuperMESH Power MOSFETGeneral features3Type VDSS RDS(on) ID Pw1STD4NK50ZD-1 500V
9.31. Size:801K st
stb4n62k3 stf4n62k3 stp4n62k3 sti4n62k3.pdf 
STB4N62K3, STF4N62K3STI4N62K3, STP4N62K3N-channel 620 V, 1.8 , 3.8 A SuperMESH3 Power MOSFETD2PAK, TO-220FP, I2PAK, TO-220Preliminary dataFeaturesRDS(on) Type VDSS ID Pwmax33311STB4N62K3 70 W 21DPAKSTF4N62K3 25 WTO-220FP620 V
9.32. Size:331K st
stp4nb30.pdf 
STP4NB30STP4NB30FPN-CHANNEL 300V - 1.8 - 4A - TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP4NB30 300 V
9.33. Size:210K st
stp4nb100.pdf 
STP4NB100STP4NB100FPN - CHANNEL 1000V - 4 - 3.8A - TO-220/TO-220FPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTP4NB100 1000 V
9.35. Size:129K st
stp4nb50.pdf 
STP4NB50STP4NB50FPN-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FPPowerMesh MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NB50 500 V
9.36. Size:382K st
stp4na40.pdf 
STP4NA40STP4NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA40 400 V
9.37. Size:356K st
stp4nc60-fp--1.pdf 
STP4NC60 - STP4NC60FPSTB4NC60-1N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP4NC60 600V
9.38. Size:77K st
stp4na100.pdf 
STP4NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP4NA100 1000 V
9.39. Size:620K st
stp4nk80z.pdf 
STP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-CHANNEL 800V - 3 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESH Power MOSFETTYPE VDSS RDS(on) ID PwSTP4NK80Z 800 V
9.40. Size:405K st
stp4na60.pdf 
STP4NA60STP4NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA60 600 V
9.41. Size:701K st
stp4nk60z stp4nk60zfp.pdf 
STP4NK60Z, STP4NK60ZFPN-channel 600 V, 1.7 typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max. PTOT IDSTP4NK60ZTAB600 V 2 70 W 4 ASTP4NK60ZFP 100% avalanche tested3 32 211 Very low intrinsic capacitancesTO-220TO-220FP Zener-protectedApplications
9.42. Size:201K inchange semiconductor
stp4nk60zfp.pdf 
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP4NK60ZFPFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
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