GAN063-650WSA Specs and Replacement

Type Designator: GAN063-650WSA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT429

GAN063-650WSA substitution

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GAN063-650WSA datasheet

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GAN063-650WSA

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Detailed specifications: BUK9M8R5-40H, BUK9M9R1-40E, BUK9M9R5-40H, BUK9Y1R3-40H, BUK9Y1R6-40H, BUK9Y1R9-40H, BUK9Y2R4-40H, BUK9Y2R8-40H, K4145, NX138AK, NX138AKS, NX138BK, NX138BKS, NX138BKW, NX3008NBKMB, NX3008PBKMB, NX3020NAKS

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