All MOSFET. GAN063-650WSA Datasheet

 

GAN063-650WSA Datasheet and Replacement


   Type Designator: GAN063-650WSA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT429
 

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GAN063-650WSA Datasheet (PDF)

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GAN063-650WSA

GAN063-650WSA650 V, 50 m Gallium Nitride (GaN) FET20 March 2020 Product data sheet1. General descriptionThe GAN063-650WSA is a 650 V, 50 m Gallium Nitride (GaN) FET. It is a normally-off device thatcombines Nexperias state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFETtechnologies offering superior reliability and performance.2. Features and benefits

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History: RFP5P12 | IRF820ASPBF | IRFY430CM

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