GAN063-650WSA MOSFET. Datasheet pdf. Equivalent
Type Designator: GAN063-650WSA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 34.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT429
GAN063-650WSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GAN063-650WSA Datasheet (PDF)
..1. Size:282K nxp
gan063-650wsa.pdf
gan063-650wsa.pdf
GAN063-650WSA650 V, 50 m Gallium Nitride (GaN) FET20 March 2020 Product data sheet1. General descriptionThe GAN063-650WSA is a 650 V, 50 m Gallium Nitride (GaN) FET. It is a normally-off device thatcombines Nexperias state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFETtechnologies offering superior reliability and performance.2. Features and benefits
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
