All MOSFET. STP4NA80 Datasheet

 

STP4NA80 Datasheet and Replacement


   Type Designator: STP4NA80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO220
 

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STP4NA80 Datasheet (PDF)

 ..1. Size:383K  st
 stp4na80.pdf pdf_icon

STP4NA80

STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

 0.1. Size:391K  st
 stp4na80-fi.pdf pdf_icon

STP4NA80

STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

 8.1. Size:96K  st
 stp4na60fp.pdf pdf_icon

STP4NA80

STP4NA60FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP4NA60FP 600 V

 8.2. Size:239K  st
 stp4na90 stp4na90fi.pdf pdf_icon

STP4NA80

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Keywords - STP4NA80 MOSFET datasheet

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