All MOSFET. NX3020NAKW Datasheet

 

NX3020NAKW Datasheet and Replacement


   Type Designator: NX3020NAKW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 2.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: SOT323
 

 NX3020NAKW substitution

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NX3020NAKW Datasheet (PDF)

 ..1. Size:712K  nxp
 nx3020nakw.pdf pdf_icon

NX3020NAKW

NX3020NAKW30 V, 180 mA N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag

 5.1. Size:249K  nxp
 nx3020nak.pdf pdf_icon

NX3020NAKW

NX3020NAK30 V, single N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold volt

 5.2. Size:702K  nxp
 nx3020nakv.pdf pdf_icon

NX3020NAKW

NX3020NAKV30 V, 200 mA dual N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flatlead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection

 5.3. Size:715K  nxp
 nx3020naks.pdf pdf_icon

NX3020NAKW

NX3020NAKS30 V, 180 mA dual N-channel Trench MOSFET11 November 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low

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Datasheet: NX138AKS , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , NX3008PBKMB , NX3020NAKS , NX3020NAKV , IRFP450 , NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE , PMCM4401UPE , PMCM4402UPE , PMCM6501UNE , PMCM6501UPE .

History: 2SK3663

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