NX6020CAKS Datasheet and Replacement
Type Designator: NX6020CAKS
Marking Code: 2A*
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 0.33 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 3.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: SOT363
NX6020CAKS substitution
NX6020CAKS Datasheet (PDF)
..1. Size:308K nxp
nx6020caks.pdf
nx6020caks.pdf
NX6020CAKS60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET18 January 2018 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very smallSOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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