NX6020CAKS Specs and Replacement

Type Designator: NX6020CAKS

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 3.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: SOT363

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NX6020CAKS datasheet

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NX6020CAKS

NX6020CAKS 60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET 18 January 2018 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching ... See More ⇒

Detailed specifications: NX138BK, NX138BKS, NX138BKW, NX3008NBKMB, NX3008PBKMB, NX3020NAKS, NX3020NAKV, NX3020NAKW, AON7506, NX7002AKA, NX7002BKH, PMCM4401UNE, PMCM4401UPE, PMCM4402UPE, PMCM6501UNE, PMCM6501UPE, PMCM6501VNE

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