All MOSFET. NX6020CAKS Datasheet

 

NX6020CAKS Datasheet and Replacement


   Type Designator: NX6020CAKS
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 3.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: SOT363
 

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NX6020CAKS Datasheet (PDF)

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NX6020CAKS

NX6020CAKS60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET18 January 2018 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very smallSOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching

Datasheet: NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , NX3008PBKMB , NX3020NAKS , NX3020NAKV , NX3020NAKW , IRFP250 , NX7002AKA , NX7002BKH , PMCM4401UNE , PMCM4401UPE , PMCM4402UPE , PMCM6501UNE , PMCM6501UPE , PMCM6501VNE .

History: ME3483 | SI7945DP

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