NX6020CAKS MOSFET. Datasheet pdf. Equivalent
Type Designator: NX6020CAKS
Marking Code: 2A*
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 0.17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.33 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 3.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: SOT363
NX6020CAKS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NX6020CAKS Datasheet (PDF)
..1. Size:308K nxp
nx6020caks.pdf
nx6020caks.pdf
NX6020CAKS60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET18 January 2018 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very smallSOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
