All MOSFET. STP4NA80FI Datasheet

 

STP4NA80FI Datasheet and Replacement


   Type Designator: STP4NA80FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: ISOWATT220
 

 STP4NA80FI substitution

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STP4NA80FI Datasheet (PDF)

 6.1. Size:383K  st
 stp4na80.pdf pdf_icon

STP4NA80FI

STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

 6.2. Size:391K  st
 stp4na80-fi.pdf pdf_icon

STP4NA80FI

STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

 8.1. Size:96K  st
 stp4na60fp.pdf pdf_icon

STP4NA80FI

STP4NA60FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP4NA60FP 600 V

 8.2. Size:239K  st
 stp4na90 stp4na90fi.pdf pdf_icon

STP4NA80FI

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Datasheet: STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , IRF540N , STP50N05L , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 .

History: BRD3N25 | IRL2505L | BSB012N03LX3 | BRD2N60

Keywords - STP4NA80FI MOSFET datasheet

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