All MOSFET. PMCM950ENE Datasheet

 

PMCM950ENE Datasheet and Replacement


   Type Designator: PMCM950ENE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: WLCSP9
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PMCM950ENE Datasheet (PDF)

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PMCM950ENE

PMCM950ENE60 V, N-channel Trench MOSFET13 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 1.48 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disch

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History: CHM85A3PAGP

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