PMCM950ENE Specs and Replacement

Type Designator: PMCM950ENE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: WLCSP9

PMCM950ENE substitution

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PMCM950ENE datasheet

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 pmcm950ene.pdf pdf_icon

PMCM950ENE

PMCM950ENE 60 V, N-channel Trench MOSFET 13 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 1.48 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disch... See More ⇒

Detailed specifications: NX7002BKH, PMCM4401UNE, PMCM4401UPE, PMCM4402UPE, PMCM6501UNE, PMCM6501UPE, PMCM6501VNE, PMCM650CUNE, 10N65, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL, PMF250XNE, PMF63UNE

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.