PMF63UNE Specs and Replacement

Type Designator: PMF63UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT323

PMF63UNE substitution

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PMF63UNE datasheet

 ..1. Size:712K  nxp
 pmf63une.pdf pdf_icon

PMF63UNE

PMF63UNE 20 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage ElectroStatic Discharge (ESD) protection > ... See More ⇒

 7.1. Size:863K  nxp
 pmf63un.pdf pdf_icon

PMF63UNE

PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast ... See More ⇒

Detailed specifications: PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL, PMF250XNE, IRF2807, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA

Keywords - PMF63UNE MOSFET specs

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