PMH1200UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMH1200UPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.52 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.4 nC
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SOT8001
PMH1200UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMH1200UPE Datasheet (PDF)
..1. Size:270K nxp
pmh1200upe.pdf
pmh1200upe.pdf
PMH1200UPE30 V, P-channel Trench MOSFET4 March 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Ele
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