PMH1200UPE Specs and Replacement
Type Designator: PMH1200UPE
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 5.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SOT8001
PMH1200UPE substitution
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PMH1200UPE datasheet
pmh1200upe.pdf
PMH1200UPE 30 V, P-channel Trench MOSFET 4 March 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Ele... See More ⇒
Detailed specifications: PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL, PMF250XNE, PMF63UNE, STF13NM60N, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE
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