PMH950UPE PDF and Equivalents Search

 

PMH950UPE Specs and Replacement

Type Designator: PMH950UPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 6.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: SOT8001

PMH950UPE substitution

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PMH950UPE datasheet

 ..1. Size:267K  nxp
 pmh950upe.pdf pdf_icon

PMH950UPE

PMH950UPE 20 V, P-channel Trench MOSFET 5 April 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Elec... See More ⇒

Detailed specifications: PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , IRFZ24N , PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA .

Keywords - PMH950UPE MOSFET specs

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