PMH950UPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMH950UPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.53 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.29 nC
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 6.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: SOT8001
PMH950UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMH950UPE Datasheet (PDF)
..1. Size:267K nxp
pmh950upe.pdf
pmh950upe.pdf
PMH950UPE20 V, P-channel Trench MOSFET5 April 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Elec
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
