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PMH950UPE Specs and Replacement


   Type Designator: PMH950UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 6.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT8001
 

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PMH950UPE datasheet

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PMH950UPE

PMH950UPE 20 V, P-channel Trench MOSFET 5 April 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Elec... See More ⇒

Detailed specifications: PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , IRFZ24N , PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA .

History: IRHM7064 | AGM042N10A | AGM12N10D | AGM1095M | 2SK3593-01 | R9521

Keywords - PMH950UPE MOSFET specs

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