All MOSFET. PMH950UPE Datasheet

 

PMH950UPE Datasheet and Replacement


   Type Designator: PMH950UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 6.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT8001
 

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PMH950UPE Datasheet (PDF)

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PMH950UPE

PMH950UPE20 V, P-channel Trench MOSFET5 April 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Elec

Datasheet: PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , AON6380 , PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA .

History: 2N6798SM | IRLZ34NLPBF

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