PMN230ENEA Datasheet and Replacement
Type Designator: PMN230ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.222 Ohm
Package: TSOP6
PMN230ENEA substitution
PMN230ENEA Datasheet (PDF)
pmn230enea.pdf

PMN230ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
pmn230ene.pdf

PMN230ENE60 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Dischar
Datasheet: PMF63UNE , PMH1200UPE , PMH950UPE , PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , IRF730 , PMN25ENE , PMN25ENEA , PMN280ENEA , PMN28UNE , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP .
History: AP2310AGN-HF | APT5F100K | TMPF8N25Z | PSMN7R0-30YL | BUK663R5-55C | AON6998 | DMG3402L
Keywords - PMN230ENEA MOSFET datasheet
PMN230ENEA cross reference
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History: AP2310AGN-HF | APT5F100K | TMPF8N25Z | PSMN7R0-30YL | BUK663R5-55C | AON6998 | DMG3402L



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