PMN52XP Specs and Replacement
Type Designator: PMN52XP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.3 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
Package: TSOP6
PMN52XP substitution
- MOSFET ⓘ Cross-Reference Search
PMN52XP datasheet
pmn52xp.pdf
PMN52XP 20 V, P-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1240 mW... See More ⇒
Detailed specifications: PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE, PMN48XPA, PMN50EPE, MMIS60R580P, PMN55ENE, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, PMPB10EN, PMPB10UP
Keywords - PMN52XP MOSFET specs
PMN52XP cross reference
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PMN52XP substitution
PMN52XP replacement
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