All MOSFET. PMN52XP Datasheet

 

PMN52XP Datasheet and Replacement


   Type Designator: PMN52XP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.3 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TSOP6
 

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PMN52XP Datasheet (PDF)

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PMN52XP

PMN52XP20 V, P-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1240 mW

Datasheet: PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE , PMN48XPA , PMN50EPE , MMIS60R580P , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , PMPB100XPEA , PMPB10EN , PMPB10UP .

History: HFP730F | IRFI9620G

Keywords - PMN52XP MOSFET datasheet

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