PMN55ENEA Specs and Replacement

Type Designator: PMN55ENEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.667 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TSOP6

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PMN55ENEA datasheet

 ..1. Size:265K  nxp
pmn55enea.pdf pdf_icon

PMN55ENEA

PMN55ENEA 60 V, N-channel Trench MOSFET 26 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E... See More ⇒

 6.1. Size:271K  nxp
pmn55ene.pdf pdf_icon

PMN55ENEA

PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch... See More ⇒

Detailed specifications: PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE, PMN48XPA, PMN50EPE, PMN52XP, PMN55ENE, AO4407A, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, PMPB10EN, PMPB10UP, PMPB10XNEA, PMPB12UNE

Keywords - PMN55ENEA MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.