All MOSFET. PMN55ENEA Datasheet

 

PMN55ENEA Datasheet and Replacement


   Type Designator: PMN55ENEA
   Marking Code: J4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.667 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.8 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP6
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PMN55ENEA Datasheet (PDF)

 ..1. Size:265K  nxp
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PMN55ENEA

PMN55ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E

 6.1. Size:271K  nxp
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PMN55ENEA

PMN55ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch

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History: JCS9N50VC | HLML6401 | AON6508

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