PMN70XP Specs and Replacement

Type Designator: PMN70XP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm

Package: TSOP6

PMN70XP substitution

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PMN70XP datasheet

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PMN70XP

PMN70XP 20 V, P-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat... See More ⇒

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PMN70XP

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PMN70XP

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PMN70XP

PMN70EPE 30 V, P-channel Trench MOSFET 23 May 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipati... See More ⇒

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Detailed specifications: PMN40ENA, PMN40ENE, PMN48XPA, PMN50EPE, PMN52XP, PMN55ENE, PMN55ENEA, PMN70EPE, IRFP064N, PMPB100ENE, PMPB100XPEA, PMPB10EN, PMPB10UP, PMPB10XNEA, PMPB12UNE, PMPB12UNEA, PMPB13UP

Keywords - PMN70XP MOSFET specs

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