PMPB50ENE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB50ENE
Marking Code: 3U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.1 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 58 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: SOT1220
PMPB50ENE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB50ENE Datasheet (PDF)
pmpb50ene.pdf
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