PMPB50ENE Datasheet and Replacement
Type Designator: PMPB50ENE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 58 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: SOT1220
PMPB50ENE substitution
PMPB50ENE Datasheet (PDF)
pmpb50ene.pdf

PMPB50ENE30 V, N-channel Trench MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl
pmpb55enea.pdf

PMPB55ENEA60 V, N-channel Trench MOSFET6 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2
pmpb55xnea.pdf

PMPB55XNEA30 V, N-channel Trench MOSFET29 March 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD p
Datasheet: PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA , PMPB29XPEA , PMPB30XPE , PMPB43XPEA , PMPB48EPA , IRFP250N , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , PMT560ENEA , PMV100ENEA , PMV100XPEA .
History: 4N80L-TF1-T
Keywords - PMPB50ENE MOSFET datasheet
PMPB50ENE cross reference
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History: 4N80L-TF1-T



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