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PMT280ENEA Spec and Replacement


   Type Designator: PMT280ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: SOT223

 PMT280ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMT280ENEA Specs

 ..1. Size:727K  nxp
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PMT280ENEA

PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic ... See More ⇒

Detailed specifications: PMPB30XPE , PMPB43XPEA , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , IRFP250N , PMT560ENEA , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA .

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