PMT280ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMT280ENEA
Marking Code: 28ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: SOT223
PMT280ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMT280ENEA Datasheet (PDF)
..1. Size:727K nxp
pmt280enea.pdf
pmt280enea.pdf
PMT280ENEA100 V N-channel Trench MOSFET14 July 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223(SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
