All MOSFET. PMT560ENEA Datasheet

 

PMT560ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMT560ENEA
   Marking Code: 56ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 1.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.9 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.715 Ohm
   Package: SOT223

 PMT560ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMT560ENEA Datasheet (PDF)

 ..1. Size:738K  nxp
 pmt560enea.pdf

PMT560ENEA PMT560ENEA

PMT560ENEA100 V N-channel Trench MOSFET14 July 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223(SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQB2N60TM

 

 
Back to Top