All MOSFET. PMT560ENEA Datasheet

 

PMT560ENEA Datasheet and Replacement


   Type Designator: PMT560ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.715 Ohm
   Package: SOT223
 

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PMT560ENEA Datasheet (PDF)

 ..1. Size:738K  nxp
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PMT560ENEA

PMT560ENEA100 V N-channel Trench MOSFET14 July 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223(SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic

Datasheet: PMPB43XPEA , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , 7N65 , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA .

History: VBM17R10 | CS9N65F

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