All MOSFET. PMT560ENEA Datasheet

 

PMT560ENEA Datasheet and Replacement


   Type Designator: PMT560ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.715 Ohm
   Package: SOT223
 

 PMT560ENEA substitution

   - MOSFET ⓘ Cross-Reference Search

 

PMT560ENEA Datasheet (PDF)

 ..1. Size:738K  nxp
 pmt560enea.pdf pdf_icon

PMT560ENEA

PMT560ENEA100 V N-channel Trench MOSFET14 July 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223(SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic

Datasheet: PMPB43XPEA , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , IRF9540 , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA .

History: CEM3109

Keywords - PMT560ENEA MOSFET datasheet

 PMT560ENEA cross reference
 PMT560ENEA equivalent finder
 PMT560ENEA lookup
 PMT560ENEA substitution
 PMT560ENEA replacement

 

 
Back to Top

 


 
.