PMT560ENEA Datasheet. Specs and Replacement

Type Designator: PMT560ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.715 Ohm

Package: SOT223

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PMT560ENEA datasheet

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PMT560ENEA

PMT560ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic ... See More ⇒

Detailed specifications: PMPB43XPEA, PMPB48EPA, PMPB50ENE, PMPB55ENEA, PMPB55XNEA, PMPB8XN, PMT200EPE, PMT280ENEA, IRF630, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA

Keywords - PMT560ENEA MOSFET specs

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