PMV100XPEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV100XPEA
Marking Code: DP*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.463 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.4 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 54 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.128 Ohm
Package: SOT23
PMV100XPEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV100XPEA Datasheet (PDF)
pmv100xpea.pdf
PMV100XPEA20 V, P-channel Trench MOSFET15 June 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar
pmv100enea.pdf
PMV100ENEA30 V, N-channel Trench MOSFET17 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
