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PMV100XPEA Spec and Replacement


   Type Designator: PMV100XPEA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.463 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.128 Ohm
   Package: SOT23

 PMV100XPEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV100XPEA Specs

 ..1. Size:265K  nxp
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PMV100XPEA

PMV100XPEA 20 V, P-channel Trench MOSFET 15 June 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar... See More ⇒

 8.1. Size:717K  nxp
 pmv100enea.pdf pdf_icon

PMV100XPEA

PMV100ENEA 30 V, N-channel Trench MOSFET 17 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc... See More ⇒

Detailed specifications: PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , PMT560ENEA , PMV100ENEA , AON7408 , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA , PMV25ENEA , PMV27UPEA .

History: JMSL0606AUQ

Keywords - PMV100XPEA MOSFET specs

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