PMV230ENEA Datasheet. Specs and Replacement

Type Designator: PMV230ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.222 Ohm

Package: SOT23

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PMV230ENEA datasheet

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PMV230ENEA

PMV230ENEA 60V, N-channel Trench MOSFET 2 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha... See More ⇒

Detailed specifications: PMT560ENEA, PMV100ENEA, PMV100XPEA, PMV15ENEA, PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, IRLB4132, PMV25ENEA, PMV27UPEA, PMV280ENEA, PMV28ENEA, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA

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