All MOSFET. PMV230ENEA Datasheet

 

PMV230ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV230ENEA
   Marking Code: DY*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.9 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.222 Ohm
   Package: SOT23

 PMV230ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV230ENEA Datasheet (PDF)

 ..1. Size:730K  nxp
 pmv230enea.pdf

PMV230ENEA PMV230ENEA

PMV230ENEA60V, N-channel Trench MOSFET2 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha

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