All MOSFET. PMV230ENEA Datasheet

 

PMV230ENEA Datasheet and Replacement


   Type Designator: PMV230ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.222 Ohm
   Package: SOT23
 

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PMV230ENEA Datasheet (PDF)

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PMV230ENEA

PMV230ENEA60V, N-channel Trench MOSFET2 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha

Datasheet: PMT560ENEA , PMV100ENEA , PMV100XPEA , PMV15ENEA , PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , 5N60 , PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA .

History: IRFP9132

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