PMV35EPE Spec and Replacement
Type Designator: PMV35EPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 134 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
PMV35EPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV35EPE Specs
pmv35epe.pdf
PMV35EPE 30 V, P-channel Trench MOSFET 6 July 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge... See More ⇒
Detailed specifications: PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , AON7410 , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA .
History: PMV37ENEA
Keywords - PMV35EPE MOSFET specs
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