All MOSFET. PMV35EPE Datasheet

 

PMV35EPE Datasheet and Replacement


   Type Designator: PMV35EPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 134 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23
 

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PMV35EPE Datasheet (PDF)

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PMV35EPE

PMV35EPE30 V, P-channel Trench MOSFET6 July 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge

Datasheet: PMV25ENEA , PMV27UPEA , PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , RFP50N06 , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA .

History: VBTA5220N | HGS290N10SL | QJD1210010 | NCE30H10G | SSM04N70BGF-A | K2698 | CJP05N60

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