All MOSFET. PMV35EPE Datasheet

 

PMV35EPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV35EPE
   Marking Code: EK*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 134 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23

 PMV35EPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV35EPE Datasheet (PDF)

 ..1. Size:723K  nxp
 pmv35epe.pdf

PMV35EPE PMV35EPE

PMV35EPE30 V, P-channel Trench MOSFET6 July 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top