All MOSFET. PMV42ENE Datasheet

 

PMV42ENE Datasheet and Replacement


   Type Designator: PMV42ENE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SOT23
 

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PMV42ENE Datasheet (PDF)

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PMV42ENE

PMV42ENE30 V, N-channel Trench MOSFET16 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Low on-state resistance Trench MOSFET technology ElectroStatic Di

Datasheet: PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , 4435 , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA .

History: TPCA8056-H | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E

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