PMV42ENE Spec and Replacement
Type Designator: PMV42ENE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT23
PMV42ENE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV42ENE Specs
pmv42ene.pdf
PMV42ENE 30 V, N-channel Trench MOSFET 16 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Low on-state resistance Trench MOSFET technology ElectroStatic Di... See More ⇒
Detailed specifications: PMV280ENEA , PMV28ENEA , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , 5N65 , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA .
History: DSE043N14N
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