All MOSFET. PMV88ENEA Datasheet

 

PMV88ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV88ENEA
   Marking Code: HT*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.615 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: SOT23

 PMV88ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV88ENEA Datasheet (PDF)

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 pmv88enea.pdf

PMV88ENEA PMV88ENEA

PMV88ENEA60 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

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