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PMV88ENEA Spec and Replacement


   Type Designator: PMV88ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.615 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: SOT23

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PMV88ENEA Specs

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PMV88ENEA

PMV88ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒

Detailed specifications: PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , STP80NF70 , PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL .

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