PMV88ENEA Datasheet. Specs and Replacement

Type Designator: PMV88ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.615 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm

Package: SOT23

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PMV88ENEA datasheet

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PMV88ENEA

PMV88ENEA 60 V, N-channel Trench MOSFET 7 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒

Detailed specifications: PMV42ENE, PMV450ENEA, PMV48XPA2, PMV52ENEA, PMV55ENEA, PMV60ENEA, PMV65ENEA, PMV74EPE, STP80NF70, PMV90ENE, PMZ600UNEL, PMZ950UPEL, PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL

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