All MOSFET. PMV88ENEA Datasheet

 

PMV88ENEA Datasheet and Replacement


   Type Designator: PMV88ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.615 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: SOT23
 

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PMV88ENEA Datasheet (PDF)

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PMV88ENEA

PMV88ENEA60 V, N-channel Trench MOSFET7 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

Datasheet: PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , PMV65ENEA , PMV74EPE , 20N50 , PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL .

History: BL4N150-A | IPB34CN10N | FQD2N50TF | TPC80R300C | SL75N06Q | P2610BT | DMN3035LWN

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