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PMZB950UPEL Spec and Replacement


   Type Designator: PMZB950UPEL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT883B

 PMZB950UPEL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMZB950UPEL Specs

 ..1. Size:719K  nxp
 pmzb950upel.pdf pdf_icon

PMZB950UPEL

PMZB950UPEL 20 V, P-channel Trench MOSFET 5 December 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and ... See More ⇒

 4.1. Size:225K  nxp
 pmzb950upe.pdf pdf_icon

PMZB950UPEL

PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic packa... See More ⇒

Detailed specifications: PMV60ENEA , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , 4N60 , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , PSMN012-60MS , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF .

Keywords - PMZB950UPEL MOSFET specs

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