All MOSFET. STP55N06LFI Datasheet

 

STP55N06LFI MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP55N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 950 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: ISOWATT220

 STP55N06LFI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP55N06LFI Datasheet (PDF)

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Datasheet: STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 , STP55N05L , STP55N05LFI , STP55N06L , IRFB4110 , STP5N25L , STP5N25LFI , STP5N30 , STP5N30FI , STP5N30L , STP5N30LFI , STP5N50 , STP5N50FI .

 

 
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