STP5N30LFI Datasheet and Replacement
Type Designator: STP5N30LFI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: ISOWATT220
STP5N30LFI substitution
STP5N30LFI Datasheet (PDF)
stp5n30l.pdf
STP5N30LSTP5N30LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5N30L 300 V
stp5n30-.pdf
STP5N30STP5N30FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP5N30 300 V
stp5n30.pdf
STP5N30STP5N30FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5N30 300 V
Datasheet: STP55N05LFI , STP55N06L , STP55N06LFI , STP5N25L , STP5N25LFI , STP5N30 , STP5N30FI , STP5N30L , 2SK3878 , STP5N50 , STP5N50FI , STP5N60 , STP5N60FI , STP5N80 , STP5N80FI , STP5N80XI , STP5N90 .
History: FDC8601 | IRLU3717 | CET0215 | SSF5NS60UD | IXTA1R4N100P | SMOS44N80 | SISA12DN
Keywords - STP5N30LFI MOSFET datasheet
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History: FDC8601 | IRLU3717 | CET0215 | SSF5NS60UD | IXTA1R4N100P | SMOS44N80 | SISA12DN
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