FDU3N50NZTU MOSFET Datasheet: N-Ch, 500V, 2.5A. Full specification with pinout and replacement list

FDU3N50NZTU Specs and Replacement

Type Designator: FDU3N50NZTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: IPAK

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FDU3N50NZTU datasheet

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FDU3N50NZTU N-Channel UniFET II MOSFET 500 V, 2.5 A, 2.5 W UniFET II MOSFET is ON Semiconductor s high voltage www.onsemi.com MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior D switching performance and higher avalanche energy strength. In addition,... See More ⇒

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February 2007 TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially ta... See More ⇒

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