NTB095N65S3HF MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB095N65S3HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 61 pF
Maximum Drain-Source On-State Resistance (Rds): 0.095 Ohm
Package: D2PAK
NTB095N65S3HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB095N65S3HF Datasheet (PDF)
..1. Size:334K onsemi
ntb095n65s3hf.pdf
ntb095n65s3hf.pdf
NTB095N65S3HFMOSFET NChannel,SUPERFET III, FRFET650 V, 36 A, 95 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 95 mW @ 10 V 36 Acharge performance. This advanced technol
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