NTBG060N090SC1 Specs and Replacement

Type Designator: NTBG060N090SC1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 211 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm

Package: D2PAK-7L

NTBG060N090SC1 substitution

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NTBG060N090SC1 datasheet

 ..1. Size:793K  onsemi
 ntbg060n090sc1.pdf pdf_icon

NTBG060N090SC1

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 9.1. Size:336K  onsemi
 ntbg040n120sc1.pdf pdf_icon

NTBG060N090SC1

MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 mW, 60 A NTBG040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) Low Effective Output Capacitance (Typ. Coss = 139 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested TJ = 175 C 1200 V 56 mW @ 20 V 60 A This Device is Pb-Free and is RoHS Compliant ... See More ⇒

 9.2. Size:362K  onsemi
 ntbg020n120sc1.pdf pdf_icon

NTBG060N090SC1

MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm NTBG020N120SC1 Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) 100% Avalanche Tested V(BR)DSS RDS(ON) MAX ID MAX TJ = 175 C 1200 V 28 mW @ 20 V 98 A RoHS Compliant Typical Applic... See More ⇒

Detailed specifications: NID9N05BCL, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1, NTBG040N120SC1, AON7403, NTBG160N120SC1, NTBGS4D1N15MC, NTBGS6D5N15MC, NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC

Keywords - NTBG060N090SC1 MOSFET specs

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